Search results for " RRAM"

Resistive switching of anodic TiO2-based Memristors

2018

In recent years, memristors have attracted great attention owing to their simple fabrication process, high scalability, good compatibility with the CMOS technology, high switching speed, low power consumption and low cost for next-generation non-volatile memory technology [1]. The basic cell structure of a memristor is an insulator sandwiched between two metal electrodes. Among the materials being studied for memristors fabrication, binary metal oxides, such as TiO2, are most favourable because of their simple constituents, compatible with CMOS processes, and resistive to thermal/chemical damages. Anodizing is a an electrochemical low cost process carried out at room temperature to grow oxi…